内存颗粒DDR4/DDR5

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内存颗粒海力士（SK Hynix）、三星（Samsung）、美光（Micron） 本公司买卖内存颗粒 DDR4/DDR5等系列都可以. 欢迎垂询联系人:黄先生联系电话 13410308479

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产品介绍

介绍

我司作为SK海力士（SK Hynix）、三星（Samsung）、美光（Micron）三大品牌内存颗粒（DRAM）的核心合作供应商，深耕行业多年，凭借良好的企业信誉与稳定的合作渠道，为全球客户提供优质、全面的产品服务。我们具备四大核心优势，全方位保障客户采购需求：一是供货稳定，常年储备三大品牌充足库存，覆盖DDR4、DDR5等系列内存颗粒，可保障各类批量订单及时交付，杜绝缺货断供风险；二是价格优势显著，为客户提供极具竞争力的采购价格，降低客户采购成本；三是严格坚守正品保障，所有产品均为原厂原装，经过多重严格品控检测，杜绝任何假冒伪劣产品；四是信誉过硬，始终秉持诚信经营、客户至上的理念，多年来赢得了行业内广泛认可与众多客户的长期信赖。若您有采购内存颗粒相关产品的需求，均可联系我们咨询对接，我们将提供专业、高效、贴心的整体解决方案。

一、每周库存更新表

📌 标注价格仅为参考区间，最终价格取决于订购数量及当前市场行情。点击 “获取报价” 查看精准价格。

型号	年份	库存	价格参考(USD)	备注	需求
KLM4G1FETE-B041	25+	12800		Volume discount available	询价
KLM8G1GETF-B041	25+	6720		Volume discount available	询价
K4B2G1646F-BHMA	22+	10000		Volume discount available	询价
K4B2G1646F-BMMA	23+	2092		Volume discount available	询价
K4B4G1646D-BFMA	21+	2240		Volume discount available	询价
K4B4G1646E-BCNB	25+	4480		Volume discount available	询价
K4B2G1646F-BYK0	18+	10000		Volume discount available	询价
K4E6E304EB-EGCF	20+	4480		Volume discount available	询价
K4FBE3D4HB-KFCL	25+	6480		Volume discount available	询价
K4F8E3S4HD-GFCL	25+	6400		Volume discount available	询价
K4F8E3S4HD-GHCL	25+	20000		Volume discount available	询价
K4F8E164HA-MGCL	24+	50k	$20~23	Volume discount available	询价
K4F6E3S4HM-MGCJ	25+	3480	$55~57	Volume discount available	询价
K4UBE3D4AM-TFCL	22+	4800		Volume discount available	询价
K3KL7L70DM-MGCT	23+	1000	$35	Volume discount available	询价
K3KL9L90EM-MGCU	26+	1500	$147~149	Volume discount available	询价
K3KLALA0CM-MGCT	23+	1280	$250~253	Volume discount available	询价
K3LKLKL0EM-MGCN	22+	3600	$35	Volume discount available	询价
KM4X60002M-B321	25+	4000		Volume discount available	询价
KLMCG4JEUD-B04Q058	25+	2240 pcs	$137~140	Volume discount available	询价
K4F6E3S4HM-THCL	26+	2240		Volume discount available	询价
CXDQ3BFAM-CQ-A	22+	20480 pcs	$19~20	Volume discount available	询价
MT25QL01GBBB8ESF-0SIT	26+	6000	$29~31	Volume discount available	询价
MT41K128M16JT-125:K	25+	6000	$60~62	Volume discount available	询价
K4F6E3S4HM-MGCJ	25+	3840 pcs	$56~58	Volume discount available	询价
H5CG48MEBDX014N	25+	12800 PCS	$38~40	Volume discount available	询价
H5CG48AGBDX018N	26+	1596		Volume discount available	询价
K4A8G165WG-BCWE	25+	2240	$39~41	Volume discount available	询价
MTFC8GACAENS-K1 AIT	22+	4000	$33~35	Volume discount available	询价
MT47H64M16NF-25E AIT:M	24+	54k	$6.5~8	Volume discount available	询价
K4F8E164HA-MGCLT00	24+	80k	$22~24	Volume discount available	询价
MT53E512M32D1ZW-046B AIT:B	25+	2720pcs	$97~100	Volume discount available	询价
K4F8E3S4HD-GHCLT2V	25+	6000	$23~25	Volume discount available	询价
CXDBBCCAM-MK-A	21+	8000	$30~33	Volume discount available	询价
H5AN8G8NCJR-VKC	21+	29682 pcs	$30~32	Volume discount available	询价
MTFC32GASAQHD-AAT	25+	8k	$63~65	Volume discount available	询价
K4A8G165WC-BCWE	23+	1120		Volume discount available	询价
K4B4G1646E-BYMA	25+	1120		Volume discount available	询价
K4B4G1646E-BCNB	23+	4480 pcs		Volume discount available	询价
MT29F8G08ABACAWP-IT:C	26+	2000pcs		Volume discount available	询价
K4U6E3S4AB-MGCL	25+	2560pcs		Volume discount available	询价
K4F8E3S4HD-MGCL	24+			Volume discount available	询价
KLMAG1JETD-B041	24+	5600		Volume discount available	询价
MT41K128M16JT-125 AAT:K	21+	6k		Volume discount available	询价
H9CCNNN8GTALAR-NVD	19+	28500		Volume discount available	询价
FLXC2002G-26	24+			Volume discount available	询价
EMMC16G-TB28-A20	19+			Volume discount available	询价
KLMCG4JEUD-B04Q	25+	2240 pcs		Volume discount available	询价
K4UCE3Q4AB-KFCL03V	25+	2560 pcs		Volume discount available	询价

二、DDR4

型号	容量	组织/位宽	速度	工艺/芯片类型	封装	电压	温度范围
H5ANBG6NAMR-XNC	32Gb	4Gb×8	3200Mbps	1Xnm工艺	96 FBGA	1.2V	0°C ~ 85°C
H5ANBG8NCMR-VKC	64Gb	8Gb×8	3200Mbps	1Ynm工艺	144 FBGA	1.2V	0°C ~ 85°C
H5CNBG8NCMR-VKC	64Gb	8Gb×8	3200Mbps	1Znm工艺	144 FBGA	1.2V	0°C ~ 85°C
H5ANBG4NCMR-VKC	32Gb	4Gb×8	2666Mbps	1Xnm工艺	96 FBGA	1.2V	0°C ~ 85°C
H5ANBG2NCMR-VKC	16Gb	2Gb×8	2666Mbps	1Xnm工艺	78 FBGA	1.2V	0°C ~ 85°C
H5ANS1G83BFR-26E	8Gb	1Gb×8	2666Mbps	1Ynm工艺	78 FBGA	1.2V	0°C ~ 85°C
H5ANS2G83BFR-26E	16Gb	2Gb×8	2666Mbps	1Ynm工艺	78 FBGA	1.2V	0°C ~ 85°C
H5ANS4G83BFR-26E	32Gb	4Gb×8	2666Mbps	1Ynm工艺	96 FBGA	1.2V	0°C ~ 85°C
H5ANS8G83BFR-26E	64Gb	8Gb×8	2666Mbps	1Znm工艺	144 FBGA	1.2V	0°C ~ 85°C
H5ANS1G83BFR-32E	8Gb	1Gb×8	3200Mbps	1Ynm工艺	78 FBGA	1.2V	0°C ~ 85°C
H5ANS2G83BFR-32E	16Gb	2Gb×8	3200Mbps	1Ynm工艺	78 FBGA	1.2V	0°C ~ 85°C
H5ANS4G83BFR-32E	32Gb	4Gb×8	3200Mbps	1Ynm工艺	96 FBGA	1.2V	0°C ~ 85°C
H5ANS8G83BFR-32E	64Gb	8Gb×8	3200Mbps	1Znm工艺	144 FBGA	1.2V	0°C ~ 85°C
H5ANS1G83CFR-32E	8Gb	1Gb×8	3200Mbps	1Znm工艺	78 FBGA	1.2V	-40°C ~ 95°C
H5ANS2G83CFR-32E	16Gb	2Gb×8	3200Mbps	1Znm工艺	78 FBGA	1.2V	-40°C ~ 95°C

Part Number	Capacity	Organization / Bus Width	Speed	Process / Common Name	Package	Voltage	Temperature Range	ODECC / Status
MT40A1G8SA-046E	8Gb	1Gb×8	4800Mbps	1β node	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A1G8SA-052E	8Gb	1Gb×8	5200Mbps	1β node	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A2G8SA-046E	16Gb	2Gb×8	4800Mbps	1β node	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A2G8SA-056E	16Gb	2Gb×8	5600Mbps	1β node	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A2G8SA-064E	16Gb	2Gb×8	6400Mbps	1α node	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A2G8SA-080E	16Gb	2Gb×8	8000Mbps	1γ node (EUV)	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A1G16SA-056E	16Gb	1Gb×16	5600Mbps	1β node	96 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A3G8SA-046E	24Gb	3Gb×8	4800Mbps	1β node	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A3G8SA-056E	24Gb	3Gb×8	5600Mbps	1β node	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A3G8SA-064E	24Gb	3Gb×8	6400Mbps	1α node	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A4G8SA-056E	32Gb	4Gb×8	5600Mbps	1α node	96 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A4G8SA-064E	32Gb	4Gb×8	6400Mbps	1α node	96 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A8G8SA-064E	64Gb	8Gb×8	6400Mbps	1γ node	144 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A16G8SA-064E	128Gb	16Gb×8	6400Mbps	1γ node	144 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A1G8SB-056E	16Gb	1Gb×8	5600Mbps	1β node E-Die	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A1G8SB-064E	16Gb	1Gb×8	6400Mbps	1α node E-Die	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A1G16SB-056E	16Gb	1Gb×16	5600Mbps	1β node E-Die	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A2G8SC-056E	16Gb	2Gb×8	5600Mbps	1γ node	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
MT40A2G8SC-064E	16Gb	2Gb×8	6400Mbps	1γ node	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
MT40A3G8SD-056E	24Gb	3Gb×8	5600Mbps	1γ node	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
MT40A4G8SD-064E	32Gb	4Gb×8	6400Mbps	1γ node	96 FBGA	1.1V	-40°C ~ 95°C	Mass Production
MT40A1G8SE-092E	8Gb	1Gb×8	9200Mbps	1γ node (Flagship)	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A2G8SE-092E	16Gb	2Gb×8	9200Mbps	1γ node (Flagship)	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A1G16SE-056E	16Gb	1Gb×16	5600Mbps	1γ node	106 FBGA	1.1V	-40°C ~ 105°C	Mass Production
MT40A2G16SE-064E	32Gb	1Gb×16	6400Mbps	1γ node	106 FBGA	1.1V	-40°C ~ 105°C	Mass Production

三、DDR5 产品规格表

型号	容量	组织/位宽	速度	工艺/芯片类型	封装	电压	温度范围
H5CG48AGBDX018N	16Gb	2Gb×8	5600Mbps	1α工艺 (A-Die)	78 FBGA	1.1V	0°C ~ 85°C
H5CG48AGBDX020N	16Gb	2Gb×8	6000Mbps	1α工艺 (A-Die)	78 FBGA	1.1V	0°C ~ 85°C
H5CG48AGBDX022N	16Gb	2Gb×8	6400Mbps	1β工艺 (B-Die)	78 FBGA	1.1V	0°C ~ 85°C
H5CG48AGBDX024N	16Gb	2Gb×8	6800Mbps	1β工艺 (B-Die)	78 FBGA	1.1V	0°C ~ 85°C
H5CG48AGBDX026N	16Gb	2Gb×8	7200Mbps	1γ工艺 (C-Die)	78 FBGA	1.1V	0°C ~ 85°C
H5CG48AGBDX028N	16Gb	2Gb×8	7600Mbps	1γ工艺 (C-Die)	78 FBGA	1.1V	0°C ~ 85°C
H5CG88AGBDX022N	32Gb	4Gb×8	6400Mbps	1γ工艺 (M-Die)	96 FBGA	1.1V	0°C ~ 85°C
H5CG88AGBDX026N	32Gb	4Gb×8	7200Mbps	1γ工艺 (M-Die)	96 FBGA	1.1V	0°C ~ 85°C
H5CG88AGBDX030N	32Gb	4Gb×8	8000Mbps	1γ工艺 (M-Die)	96 FBGA	1.1V	0°C ~ 85°C
H5CG16AGBDX026N	64Gb	8Gb×8	7200Mbps	1γ工艺 (C-Die)	144 FBGA	1.1V	0°C ~ 85°C
H5CG16AGBDX030N	64Gb	8Gb×8	8000Mbps	1γ工艺 (C-Die)	144 FBGA	1.1V	0°C ~ 85°C
H5CG16AGBDX034N	64Gb	8Gb×8	8800Mbps	1γ工艺 (旗舰级)	144 FBGA	1.1V	0°C ~ 85°C
H5CG24AGBDX026N	96Gb	12Gb×8	7200Mbps	1γ工艺 (D-Die)	144 FBGA	1.1V	0°C ~ 85°C
H5CG24AGBDX030N	96Gb	12Gb×8	8000Mbps	1γ工艺 (D-Die)	144 FBGA	1.1V	0°C ~ 85°C

Part Number	Capacity	Organization / Bus Width	Speed	Process / Common Name	Package	Voltage	Temperature Range	ODECC / Status
MT40A1G8SA-046E	8Gb	1Gb×8	4800Mbps	1β 工艺	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A1G8SA-052E	8Gb	1Gb×8	5200Mbps	1β 工艺	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A2G8SA-046E	16Gb	2Gb×8	4800Mbps	1β 工艺	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A2G8SA-056E	16Gb	2Gb×8	5600Mbps	1β 工艺	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A2G8SA-064E	16Gb	2Gb×8	6400Mbps	1α 工艺	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A2G8SA-080E	16Gb	2Gb×8	8000Mbps	1γ 工艺 (EUV)	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A1G16SA-056E	16Gb	1Gb×16	5600Mbps	1β 工艺	96 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A3G8SA-046E	24Gb	3Gb×8	4800Mbps	1β 工艺	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A3G8SA-056E	24Gb	3Gb×8	5600Mbps	1β 工艺	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A3G8SA-064E	24Gb	3Gb×8	6400Mbps	1α 工艺	78 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A4G8SA-056E	32Gb	4Gb×8	5600Mbps	1α 工艺	96 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A4G8SA-064E	32Gb	4Gb×8	6400Mbps	1α 工艺	96 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A8G8SA-064E	64Gb	8Gb×8	6400Mbps	1γ 工艺	144 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A16G8SA-064E	128Gb	16Gb×8	6400Mbps	1γ 工艺	144 FBGA	1.1V	0°C ~ 85°C	Yes
MT40A1G8SB-056E	16Gb	1Gb×8	5600Mbps	1β 工艺 E-Die	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A1G8SB-064E	16Gb	1Gb×8	6400Mbps	1α 工艺 E-Die	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A1G16SB-056E	16Gb	1Gb×16	5600Mbps	1β 工艺 E-Die	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A2G8SC-056E	16Gb	2Gb×8	5600Mbps	1γ 工艺	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
MT40A2G8SC-064E	16Gb	2Gb×8	6400Mbps	1γ 工艺	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
MT40A3G8SD-056E	24Gb	3Gb×8	5600Mbps	1γ 工艺	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
MT40A4G8SD-064E	32Gb	4Gb×8	6400Mbps	1γ 工艺	96 FBGA	1.1V	-40°C ~ 95°C	Mass Production
MT40A1G8SE-092E	8Gb	1Gb×8	9200Mbps	1γ 工艺 (Flagship)	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A2G8SE-092E	16Gb	2Gb×8	9200Mbps	1γ 工艺 (Flagship)	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
MT40A1G16SE-056E	16Gb	1Gb×16	5600Mbps	1γ 工艺	106 FBGA	1.1V	-40°C ~ 105°C	Mass Production
MT40A2G16SE-064E	32Gb	1Gb×16	6400Mbps	1γ 工艺	106 FBGA	1.1V	-40°C ~ 105°C	Mass Production

Part Number	Capacity	Organization / Bus Width	Speed	Process / Common Name	Package	Voltage	Temperature Range	ODECC / Status
K4R4G085WD-BCQK	8Gb	1Gb×8	4800Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R4G085WD-BDQK	8Gb	1Gb×8	5200Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BCQK	16Gb	2Gb×8	4800Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BDQK	16Gb	2Gb×8	5200Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BEQK	16Gb	2Gb×8	5600Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BFQK	16Gb	2Gb×8	6400Mbps	1bnm A-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BGQK	16Gb	2Gb×8	8000Mbps	1bnm A-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G165WD-BEQK	16Gb	1Gb×16	5600Mbps	1bnm M-die	96 FBGA	1.1V	0°C ~ 85°C	Yes
K4R8G085WD-BEQK-ECC	16Gb	2Gb×8	5600Mbps	1bnm M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4RMH086VD-BCQK	24Gb	3Gb×8	4800Mbps	1bnm New M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4RMH086VD-BEQK	24Gb	3Gb×8	5600Mbps	1bnm New M-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4RMH086VD-BFQK	24Gb	3Gb×8	6400Mbps	1bnm A-die	78 FBGA	1.1V	0°C ~ 85°C	Yes
K4RGH166VD-BEQK	32Gb	4Gb×8	5600Mbps	1bnm A-die	96 FBGA	1.1V	0°C ~ 85°C	Yes
K4RGH166VD-BFQK	32Gb	4Gb×8	6400Mbps	1bnm A-die	96 FBGA	1.1V	0°C ~ 85°C	Yes
K4RFE168VD-BFQK	64Gb	8Gb×8	6400Mbps	1bnm Flagship Grade	144 FBGA	1.1V	0°C ~ 85°C	Yes
K4RFE168VD-BGQK	128Gb	16Gb×8	6400Mbps	1bnm Flagship Grade	144 FBGA	1.1V	0°C ~ 85°C	Yes
K4RAH086VB-BCQK	16Gb	2Gb×8	4800Mbps	1bnm	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH086VB-BCWM	16Gb	2Gb×8	5600Mbps	1bnm	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH086VB-BIQK	16Gb	2Gb×8	4800Mbps	1bnm	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
K4RAH086VB-BIWM	16Gb	2Gb×8	5600Mbps	1bnm	82 FBGA	1.1V	-40°C ~ 95°C	Mass Production
K4RAH086VP-BCWM	16Gb	2Gb×8	5600Mbps	1bnm	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH086VE-BCWM	16Gb	2Gb×8	5600Mbps	12nm E-Die	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH165VB-BCQK	16Gb	1Gb×16	4800Mbps	1bnm	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH165VB-BCWM	16Gb	1Gb×16	5600Mbps	1bnm	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH165VB-BIQK	16Gb	1Gb×16	4800Mbps	1bnm	106 FBGA	1.1V	-40°C ~ 95°C	Mass Production
K4RAH165VB-BIWM	16Gb	1Gb×16	5600Mbps	1bnm	106 FBGA	1.1V	-40°C ~ 95°C	Mass Production
K4RAH165VP-BCWM	16Gb	1Gb×16	5600Mbps	1bnm	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RHE086VB-BCWM	24Gb	2Gb×8	5600Mbps	High Density	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RHE086VP-BCCP	24Gb	2Gb×8	5600Mbps	D1a	82 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RHE165VB-BCWM	24Gb	1Gb×16	5600Mbps	High Density	106 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RBH046VM-BCCP	32Gb	2Gb×4	6400Mbps	3DS Stacking	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RBH046VM-BCWM	32Gb	2Gb×4	5600Mbps	3DS Stacking	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RCH046VM-2CCM	32Gb	4Gb×4	5600Mbps	High Density	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RCH046VM-2CLP	32Gb	4Gb×4	6400Mbps	High Density	78 FBGA	1.1V	0°C ~ 85°C	Mass Production
K4RAH086VDBCWM	16Gb	2Gb×8	5600Mbps	D-Die	82 FBGA	1.1V	0°C ~ 85°C	Mass Production

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